Patent US Atomic layer deposition of .
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
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Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium silicon ...
An Overview of Atomic Layer Deposition and its role ... insulating materials like SiO2 cannot ... semiconductor oxide devices are zirconium, hafnium, ...
Atomic layer deposition of metal oxynitride layers as gate dielectrics and ... Atomic layer deposition of hafnium ... Atomic layer deposited zirconium ...
Home > Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus. Atomic Layer Deposition Of Insulating Hafnium And Zirconium Genus
The metal compounds have surprisingly and significantly improved uniformity when deposited by atomic layer deposition with cycle times of at least 10 seconds.
The present invention generally is a method for forming a highk dielectric layer, comprising depositing a hafnium compound by atomic layer deposition .
Process for semiconductor device fabrication in which ... and depositing by Atomic Layer Deposition an insulating layer on ... Atomic layer deposited zirconium ...
PlasmaAssisted Atomic Layer Deposition of Conductive Hafnium Nitride Using Tetrakis ... Genus Inc. website, ... zirconium oxide, ...
ALD metal oxide deposition process using direct oxidation: ... ALD metal oxide deposition process using direct ... Methods for atomic layer deposition of hafnium ...
The use of atomic layer deposition (ALD) to form a dielectric layer of hafnium nitride (Hf3N4) and hafnium oxide (HfO2) and a method of fabricating such a combination ...
Methods of using atomic layer deposition to deposit a high dielectric constant material on ... zirconium oxide atomic layer ... Atomic layer deposition of hafnium ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to ... Atomic layer deposition of capacitor ... hafnium oxide and zirconium ...
... layers provide an insulating layer in a variety of ... Atomic layer deposition of zirconiumdoped ... Atomic layer deposition of hafnium lanthanum ...
Forming the dielectric structure includes depositing hafnium oxide using atomic layer deposition ... a insulating layer ... Atomic layer deposition of zirconium ...
A capacitor structure is formed over a semiconductor substrate by atomic layer deposition to achieve ... An insulating layer ... Atomic layer deposited zirconium ...
Dec 16, 2003· Method for forming Lshaped spacers with precise width control ... are formed by atomic layer deposition ... hafnium oxide, and zirconium ...
... includes forming a layer of zirconium oxide by atomic layer deposition. ... for atomic layer deposition of hafniumcontaining high ... an insulating metal oxide ...
Jan 27, 2009· Deposition methods for forming silicon oxide layers ... "Atomic Layer Deposition of Hafnium Oxide Thin Films from Tetrakis ... An insulating layer 16, ...
A dielectric layer containing an atomic layer deposited zirconium silicon oxide film disposed in an integrated circuit and a method of fabricating such a dielectric ...
In one embodiment, a method for forming a dielectric stack on a substrate is provided which includes depositing a first layer of a dielectric material on a substrate ...
Sep 26, 2006· A method of forming (and apparatus for forming) a zirconium and/or hafniumcontaining layer on a substrate, particularly a semiconductor substrate or ...
Lanthanide oxide / hafnium oxide ... fabrication in which a insulating layer is formed on a ... et al., "Atomic Layer Deposition of ZirconiumDoped ...
The metal oxynitride layer may comprise a zirconium oxynitride layer, a hafnium ... insulating film using atomic layer deposition: ... Atomic layer deposition of ...
In an embodiment, a zirconium silicon oxide film is formed by atomic layer deposition using a zirconium precursor containing silicon and a silicon precursor.
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